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  Datasheet File OCR Text:
 DC COMPONENTS CO., LTD.
R
2SC1674
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for TV PIF, FM tuner RF amplifier, mixer, and oscillator applications.
TO-92
.190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ .500 Min (12.70)
o o
Pinning
1 = Emitter 2 = Collector 3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 30 20 4 20 150 +150 -55 to +150 Unit V V V mA mW
o o
.050 Typ (1.27)
.022(0.56) .014(0.36) .100 Typ (2.54)
.022(0.56) .014(0.36)
321
.148(3.76) .132(3.36)
.050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters)
C
C
Electrical Characteristics o
Characteristic Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width
(1)
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO IEBO
(1)
Min 30 20 4 40 400 2%
Typ 0.1 0.72 600 -
Max 0.1 0.1 0.3 240 1.3
Unit V V V A A V V MHz pF
Test Conditions IC=10A, IE=0 IC=5mA, IB=0 IE=10A, IC=0 VCB=30V, IE=0 VEB=4V, IC=0 IC=10mA, IB=1mA IC=1mA, VCE=6V IC=1mA, VCE=6V IC=1mA, VCE=6V VCB=6V, f=1MHz, IE=0
VCE(sat) VBE(on) hFE fT Cob
380s, Duty Cycle
Classification of hFE
Rank Range
R
40~80
O
70~140
Y
120~240


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